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NE021 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
23 | NE021 | NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression
B E |
CEL |
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22 | NE021 | NPN Silicon High Frequency Transistor |
NEC |
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21 | NE021 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz
E
NE021 SERIES
• HIGH POWER GAIN: 12 dB at 2 GHz
B
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz |
ETC |
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20 | NE021 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
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19 | NE02100 | NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression
B E |
CEL |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |