Datasheet MW6S010GNR1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MW6S010GNR1	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation an	Freescale Semiconductor

MW6S010G Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MW6S010GNR1	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and d	Freescale Semiconductor

Esta página es del resultado de búsqueda del MW6S010GNR1. Si pulsa el resultado de búsqueda de MW6S010GNR1 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap