Datasheet MW6S004NT1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MW6S004NT1	RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and	Freescale Semiconductor

MW6S004 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MW6S004NT1	RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and di	Freescale Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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