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Datasheet MTV16N50E Equivalent ( PDF ) |
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| 2 | MTV16N50E | TMOS POWER FET 16 AMPERES 500 VOLTS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
TMOS E-FET .™ Power Field Effect Transistor D 3 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to pr |
 Motorola Semiconductors |
 |
| 1 | MTV16N50E | Power Field Effect Transistor MTV16N50E
Advance Information TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In |
 ON Semiconductor |
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