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Datasheet MTB080P06N6 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MTB080P06N6 | P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06N6
BVDSS ID@VGS=-4.5V, TC=25°C
ID@VGS=-4.5V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-3A VGS=-4.5V, ID=-2.7A
-60V -3.8A -3.0A 79mΩ 107mΩ |
Cystech Electonics |
MTB080P0 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MTB080P06J3 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
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MTB080P06L3 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
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MTB080P06Q8 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
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Número de pieza | Descripción | Fabricantes | |
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