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MTB080P06N3 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
1 | MTB080P06N3 | P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
MTB080P06N3
BVDSS
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.7A
-60V -2.5A |
Cystech Electonics |
MTB080P06N Datasheet - resultados coincidentes |
Teilenummer | Beschreibung | Hersteller | |
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MTB080P06N3 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
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