|
|
Datasheet MTB080P06M3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MTB080P06M3 | P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 1/9
-60V P-Channel Enhancement Mode MOSFET
MTB080P06M3 BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-3A
RDSON@VGS=-4.5V, ID=-3A
-60V -3.2A
83mΩ(typ.) 112mΩ(typ.)
Features
• Single Drive Requirem |
Cystech Electonics |
MTB080P0 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MTB080P06J3 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
|
MTB080P06L3 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
|
MTB080P06Q8 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
Esta página es del resultado de búsqueda del MTB080P06M3. Si pulsa el resultado de búsqueda de MTB080P06M3 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |