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Datasheet MTB080P06J3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MTB080P06J3 | P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C069J3 Issued Date : 2016.03.16 Revised Date : Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB080P06J3 BVDSS ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-5V, ID=-8A
-60V -12.5A 82.5mΩ(typ) 107mΩ(typ)
Features
• Low Gate Charge |
Cystech Electonics |
MTB080P0 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MTB080P06J3 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
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MTB080P06L3 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
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MTB080P06Q8 | P-Channel Enhancement Mode Power MOSFET |
Cystech Electonics |
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Número de pieza | Descripción | Fabricantes | |
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