Datasheet MTB04N03E3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTB04N03E3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTB04N03E3 BVDSS ID Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plat	CYStech Electronics

MTB04N0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTB04N03H8	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET MTB04N03H8 BVDSS ID RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=25A 30V 75A 3.2 mΩ(typ) 4.9 mΩ(typ) Descripti	CYStech Electronics
MTB04N03AQ8	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB04N03AQ8 BVDSS ID @VGS=10V RDSON@VGS=10V, ID=18A RDSON@VGS=4.5V, ID=12A 30V 20A 4.4mΩ(typ) 5.8mΩ(typ) Features • Sing	CYStech Electronics
MTB04N03Q8	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB04N03Q8 BVDSS ID RDSON@VGS=10V, ID=18A RDSON@VGS=4.5V, ID=12A 30V 25A 3.5mΩ(typ) 4.8mΩ(typ) Description The MTB04N0	CYStech Electronics

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Número de pieza	Descripción	Fabricantes	PDF
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