Datasheet MTB020N03KJ3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTB020N03KJ3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB020N03KJ3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=10A Features VGS=4V, ID=10A  Low Gate	Cystech Electonics

MTB020N03 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTB020N03KM3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. 30V N-Channel Enhancement Mode MOSFET MTB020N03KM3 Spec. No. : C143M3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 1/9 Features • Simple drive requirement • Small package outline • ESD protected gate • Pb-free lead plating and	Cystech Electonics
MTB020N03KV8	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB020N03KV8 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A 30V 10A 18A 12.4m	Cystech Electonics
MTB020N03KQ8	N-Channel Enhancement Mode MOSFET CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB020N03KQ8 Spec. No. : C143Q8 Issued Date : 2015.11.13 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated	Cystech Electonics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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