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MRF555 Datenblatt PDF

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4 MRF555   Trans GP BJT NPN 16V 0.5A 4-Pin Power Macro

New Jersey Semiconductor
New Jersey Semiconductor
Datenblatt MRF555 pdf
3 MRF555   NPN SILICON RF TRANSISTOR

MRF555 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range. FEATURES: • 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 % (Typ) MAXIMUM RATINGS I
Advanced Semiconductor
Advanced Semiconductor
Datenblatt MRF555 pdf
2 MRF555   RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5 V, 470 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 1
Microsemi
Microsemi
Datenblatt MRF555 pdf
1 MRF555   NPN SILICON RF LOW POWER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MH
Motorola
Motorola
Datenblatt MRF555 pdf


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