| No | Part number | Description ( Function ) | Manufacturers | |
| 29 | MMBTA42 | NPN Silicon High Voltage Transistors MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Characteristics at Ta = 25 OC Paramet |
 PACO |
|
| 28 | MMBTA42 | Surface mount High Voltage Transistors MMBTA42 / MMBTA43 MMBTA42 / MMBTA43 NPN Surface mount High Voltage Transistors Hochspannungs-Transistoren für die Oberflächenmontage Version 2005-06-21 2.9 ±0.1 0.4 3 Type Code 1 1.9 2 1.1 2.5 max 1.3 ±0.1 Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL |
 Diotec |
|
| 27 | MMBTA42 | Silicon NPN transistor MMBTA42 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,饱和压降低,集电极输出电容低,与 MMBTA92 互补。 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92. 用途 / Applications |
 BLUE ROCKET ELECTRONICS |
|
| 26 | MMBTA42 | NPN Transistor Plastic-Encapsulate Transistors FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) MMBTA42(NPN) MARKING: 1D Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Value Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Thermal Resis |
 HOTTECH |
|
| 25 | MMBTA42 | NPN Transistors SMD Type NPN Transistors MMBTA42 (KMBTA42) Transistors ■ Features ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to MMBTA92 (PNP) +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 - |
 Kexin |
|
| 24 | MMBTA42 | NPN Transistor TRANSISTOR(NPN) FEATURES z High breakdown voltage z Low collector-emitter saturation voltage z Complementary to MMBTA92 (PNP) Marking: 1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RӨJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Thermal |
 JinYu |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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