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Datasheet MMBT5550L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | MMBT5550L | High Voltage Transistors MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE 2 EMITTER
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique •
Site and Control Change Requirements These Devices are Pb |
 ON Semiconductor |
 |
| 4 | MMBT5550LT1 | High Voltage Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5550LT1/D
High Voltage Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT5550LT1 MMBT5551LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collec |
 Motorola Semiconductors |
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| 3 | MMBT5550LT1 | High Voltage Transistors(NPN Silicon) MMBT5550LT1, MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 Symbol VCEO VCBO VEBO IC 5550 140 160 6.0 600 5551 160 180 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Colle |
 ON |
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| 2 | MMBT5550LT1 | High Voltage Transistors(NPN Silicon) |
 Leshan Radio Company |
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| Número de pieza | Descripción | Fabricantes | |
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