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Datasheet MJE13003 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 31 | MJE13003 | TRANSISTORS 深圳深爱半导体股份有限公司 Shenzhen SI Semiconductors Co., LTD.
产品规格书 Product Specification
NPN MJE 系列晶体管/MJE SERIES TRANSISTORS
MJE13003
●特点：耐高压 开关速度快 安全工作区宽 符合 RoHS 规范
■●FEATURES：■HIGH VOLTAGE CAPABILITY ■HI |
 SI Semiconductors |
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| 30 | MJE13003 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
MJE13003
TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.
FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25 )
CHAR |
 KEC |
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| 29 | MJE13003 | NPN SILICON TRANSISTOR MJE13003
FEATURES Power dissipation PCM : 1.25
NPN SILICON TRANSISTOR
TO 126
W
Tamb=25
1.BASE 2.COLLECTOR 3.EMITTER
Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V
123
ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown volta |
 Wing Shing Computer Components |
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| 28 | MJE13003 | 1.5 AMPERE, 400 VOLTS, 40 WATTS, NPN SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE13002/D
Designer's
SWITCHMODE Series NPN Silicon Power Transistors
These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and |
 Motorola Semiconductors |
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