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1 MIP2E4DMY   Silicon MOS type integrated circuit

(IPD) MIP2E4DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0
Panasonic Semiconductor
Panasonic Semiconductor
Datenblatt MIP2E4DMY pdf


MIP2E4DM Datasheet - resultados coincidentes

Teilenummer Beschreibung Hersteller PDF
MIP2E4DMY

Silicon MOS type integrated circuit

Panasonic Semiconductor
Panasonic Semiconductor
pdf datasheet


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