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MG150J7KS60 PDF Datasheet

The MG150J7KS60 is Gtr Module SilICon N Channel Igbt. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 MG150J7KS60
GTR MODULE SILICON N CHANNEL IGBT

MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 (600V/150A 7in1) High Power Switching Applications Motor Control Applications · · · · Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.) Equivalent Circuit P 14 3 15 B 4 7 8 11 12 U V W

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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Recommended search results related to MG150J7KS60

Part No Description ( Function) Manufacturers PDF
MG150J7KS50   TOSHIBA GTR Module Silicon N Channel IGBT

MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications l l l l l The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT : : : : Outlin

Toshiba
Toshiba
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MG150J7KS61   High Power Switching Applications Motor Control Applications

MG150J7KS61 MITSUBISHI IGBT Module MG150J7KS61 (600V/150A 7in1) High Power Switching Applications Motor Control Applications • • • • Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. Low thermal

Mitsubishi Electric
Mitsubishi Electric
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