Datasheet MG100Q1ZS40 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MG100Q1ZS40	N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are i	Toshiba

MG100Q1Z Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MG100Q1ZS50	N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode	Toshiba
MG100Q1ZS40	N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
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