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MBRS320 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
12 | MBRS320 | SCHOTTKY POWER RECTIFIER MBRS320
SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. |
Fairchild Semiconductor |
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11 | MBRS320 | Schottky Rectifier ( Diode ) Bulletin PD-20645 rev. D 03/03
MBRS320
SCHOTTKY RECTIFIER 3 Amp
SMC
Major Ratings and Characteristics Characteristics
IF(AV) Rectangular waveform VRRM IFSM @ t p= 5 µs sine VF TJ @ 3.0 Apk, TJ = 125°C range
Description/ Features Units |
International Rectifier |
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10 | MBRS320 | SCHOTTKY BARRIER RECTIFIERS MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
Preferred Devices
Surface Mount Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features e |
ON Semiconductor |
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9 | MBRS3200G | (MBRS320G - MBRS3200G) 3.0A Surface Mount Schottky Barrier Rectifiers Chip Schottky Barrier Rectifier
MBRS320G THRU MBRS3200G
3.0A Surface Mount Schottky Barrier Rectifiers -20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
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American First Semiconductor |
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8 | MBRS3200T3G | Surface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxid |
ON Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
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