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KTB778 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
2 | KTB778 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type KTD998
APPLICATIONS ·High power amplifier applications ·Recom |
Inchange Semiconductor |
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1 | KTB778 | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTD998. Recommended for 45 50W Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emit |
KEC |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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ROHM |
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