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Datasheet KTB1367 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | KTB1367 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB1367
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A) |
Inchange Semiconductor |
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1 | KTB1367 | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTB1367
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTD2059.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base |
KEC |
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Número de pieza | Descripción | Fabricantes | |
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