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Datasheet KSD261 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | KSD261 | NPN (LOW FREQUENCY POWER AMPLIFIER) |
 Samsung semiconductor |
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| 3 | KSD261 | Low Frequency Power Amplifier KSD261
KSD261
Low Frequency Power Amplifier
• Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C |
 Fairchild Semiconductor |
|
| 2 | KSD261 | NPN (LOW FREQUENCY POWER AMPLIFIER) |
Samsung semiconductor |
|
| 1 | KSD261 | Low Frequency Power Amplifier KSD261
KSD261
Low Frequency Power Amplifier
• Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C |
Fairchild Semiconductor |
|
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| Número de pieza | Descripción | Fabricantes | |
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