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Datasheet KDV273 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | KDV273 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) |
.gif "KEC(Korea Electronics)"){kind=logo} KEC(Korea Electronics) |
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| 3 | KDV273E | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.)
KDV273E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR |
 KEC |
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| 2 | KDV273E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) |
KEC(Korea Electronics) |
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| 1 | KDV273UL | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO
SEMICONDUCTOR
TECHNICAL DATA
KDV273UL
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
VCO FOR UHF/VHF BAND. FEATURES
High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.)
TENTATIVE
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage |
KEC |
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