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K9F1G16Q0M PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
5 | K9F1G16Q0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Iol(R/B) of 1.8V is changed. - |
Samsung semiconductor |
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4 | K9F1G16Q0M-PCB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification |
Samsung semiconductor |
|
3 | K9F1G16Q0M-PIB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification |
Samsung semiconductor |
|
2 | K9F1G16Q0M-YCB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification |
Samsung semiconductor |
|
1 | K9F1G16Q0M-YIB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification |
Samsung semiconductor |
Teilenummer | Beschreibung | Hersteller | |
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