Datasheet K4A60DB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4A60DB	TK4A60DB TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V)	Toshiba Semiconductor

K4A6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4A60DA	600V, 3.5A, N-Channel MOSFET, TK4A60DA TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDS	Toshiba
K4A60DB	TK4A60DB TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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