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Datasheet K2956 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 63 | K2900-01 | N-channel MOS-FET > Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MOS-FET
60V 14,5mΩ ±45A 60W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings |
 Fuji Electric |
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| 62 | K2902-01MR | MOSFET ( Transistor ) - 2SK2902-01MR 2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
2.54
3. Source
Maximum ratings |
Fuji Electric |
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| 61 | K2915 | MOSFET ( Transistor ) - 2SK2915 2SK2915
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2915
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.31 Ω (typ.) : |Yfs| = 15 S (typ.) Unit |
 Toshiba Semiconductor |
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| 60 | K2917 | MOSFET ( Transistor ) - 2SK2917 2SK2917
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2917
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs |
Toshiba Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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