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36 K210   LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below NOMINAL ZEN
Knox Semiconductor
Knox Semiconductor
Datenblatt K210 pdf
35 K210   LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below NOMINAL ZEN
Knox  Inc
Knox Inc
Datenblatt K210 pdf
34 K210    2SK210

2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • • • High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 M
Toshiba Semiconductor
Toshiba Semiconductor
Datenblatt K210 pdf
33 K2101    2SK2101

2SK2101-01MR FAP-IIA Series N-channel MOS-FET 800V 2,1Ω 6A 50W > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Out
Fuji Electric
Fuji Electric
Datenblatt K2101 pdf
32 K2111   MOS Field Effect Transistor

SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1
Kexin
Kexin
Datenblatt K2111 pdf


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