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K2168 Data Sheet ( PDF Datenblatt ) |
No | Teilenummer | Beschreibung | Hersteller | |
36 | K210 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZEN |
![]() Knox Semiconductor |
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35 | K210 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZEN |
![]() Knox Inc |
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34 | K210 | 2SK210 2SK210
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications VHF Band Amplifier Applications
• • • High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 M |
![]() Toshiba Semiconductor |
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33 | K2101 | 2SK2101
2SK2101-01MR
FAP-IIA Series
N-channel MOS-FET
800V
2,1Ω
6A
50W
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
> Out |
![]() Fuji Electric |
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32 | K2111 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor 2SK2111
MOSFICET
Features
Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
12 3
0.48+0.1 -0.1
0.53+0.1 -0.1
+0.12.50 -0.1
+0.14.00 -0.1
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![]() Kexin |
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Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
![]() STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
![]() WINSEMI SEMICONDUCTOR |
|
RLD78NZM5 | 780nm low power single mode laser diode |
![]() ROHM |
www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |