|
|
IXBH16N170 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
2 | IXBH16N170 | BIMOSFET Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH16N170 IXBT16N170
VCES = IC90 = VCE(sat) ≤
1700V 16A 3.3V
Symbol
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TTLSOLD Md
Weight
Test Conditions |
IXYS |
|
1 | IXBH16N170A | High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor Advanced Technical Information
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 16N170A IXBT 16N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 16 A = 6.0 V = 50 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (R |
IXYS Corporation |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
|
SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
|
RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |