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IXBH16N170 PDF ( Data Sheet )

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2 IXBH16N170   BIMOSFET Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.3V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions
IXYS
IXYS
Datenblatt IXBH16N170 pdf
1 IXBH16N170A   High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (R
IXYS Corporation
IXYS Corporation
Datenblatt IXBH16N170A pdf



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