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IXBH10N170 PDF ( Data Sheet )

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1 IXBH10N170   High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) P
IXYS Corporation
IXYS Corporation
Datenblatt IXBH10N170 pdf


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