|
|
Datasheet IRGP6630 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRGP6630D-EPbF | Insulated Gate Bipolar Transistor
VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 18A
Applications Welding H Bridge Converters
G
E
n-channel
G Gate
E C G IR |
International Rectifier |
|
1 | IRGP6630DPbF | Insulated Gate Bipolar Transistor
VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 18A
Applications Welding H Bridge Converters
G
E
n-channel
G Gate
E C G IR |
International Rectifier |
Esta página es del resultado de búsqueda del IRGP6630. Si pulsa el resultado de búsqueda de IRGP6630 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |