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IRG4PC50U Datenblatt PDF

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4 IRG4PC50U   INSULATED GATE BIPOLAR TRANSISTOR

PD 91470F IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distributi
IRF
IRF
Datenblatt IRG4PC50U pdf
3 IRG4PC50UD   INSULATED GATE BIPOLAR TRANSISTOR

PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design p
IRF
IRF
Datenblatt IRG4PC50UD pdf
2 IRG4PC50UDPBF   INSULATED GATE BIPOLAR TRANSISTOR

PD -95185 IRG4PC50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT desig
International Rectifier
International Rectifier
Datenblatt IRG4PC50UDPBF pdf
1 IRG4PC50UPBF   INSULATED GATE BIPOLAR TRANSISTOR

PD -95186 INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50UPbF UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides ti
International Rectifier
International Rectifier
Datenblatt IRG4PC50UPBF pdf


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