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IRFWZ24 PDF ( Data Sheet )

No Teilenummer Beschreibung Hersteller PDF
2 IRFWZ24   Power MOSFET ( Transistor )

Advanced Power MOSFET IRFWZ24 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leaka
Fairchild Semiconductor
Fairchild Semiconductor
Datenblatt IRFWZ24 pdf
1 IRFWZ24A   Power MOSFET ( Transistor )

Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max
Samsung
Samsung
Datenblatt IRFWZ24A pdf



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