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IRFWZ24 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
2 | IRFWZ24 | Power MOSFET ( Transistor ) Advanced Power MOSFET
IRFWZ24
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leaka |
Fairchild Semiconductor |
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1 | IRFWZ24A | Power MOSFET ( Transistor ) Advanced Power MOSFET
IRFW/IZ24A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max |
Samsung |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |