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IRFP460 Datenblatt PDF

No Teilenummer Beschreibung Hersteller PDF
22 IRFP460   Power MOSFET

$GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS =
Fairchild Semiconductor
Fairchild Semiconductor
Datenblatt IRFP460 pdf
21 IRFP460   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP460 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max)
Inchange Semiconductor
Inchange Semiconductor
Datenblatt IRFP460 pdf
20 IRFP460   Power MOSFET

International Rectifier
International Rectifier
Datenblatt IRFP460 pdf
19 IRFP460   N-Channel Power MOSFET

IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withst
Intersil Corporation
Intersil Corporation
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18 IRFP460   PowerMOS transistors Avalanche energy rated

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal
NXP
NXP
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