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Datasheet IRFP360 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | IRFP360 | Power MOSFET ( Transistor ) Power MOSFET
IRFP360, SiHFP360
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400 VGS = 10 V
210 30 110 Single
0.20
TO-247
D
S
D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rated |
 Vishay |
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| 8 | IRFP360 | N-Channel Enhancement Mode FET MegaMOSTMFET
N-Channel Enhancement Mode
IRFP 360
VDSS = 400 V
ID25 = 23 A RDS(on) = 0.20 Ω
Preliminary data
Symbol
VDSS V
DGR
VGS VGSM
ID25 ID100 IDM IAR
EAR
dv/dt
PD
TJ TJM Tstg
Md
Weight
Test Conditions
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1.0
MΩ
Continuous Transi |
 IXYS |
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| 7 | IRFP360 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP360
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mod |
 Inchange Semiconductor |
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| 6 | IRFP360 | Power MOSFET ( Transistor )
DataSheet 4 U .com
www.DataSheet4U 4U.com
DataSheet 4 U .com
www.DataSheet4U 4U.com
DataSheet 4 U .com
www.DataSheet4U www.DataSh |
 International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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