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IRFP150N Datenblatt PDF

No Teilenummer Beschreibung Hersteller PDF
4 IRFP150N   N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150N Features ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.036Ω(Max) ·Fast Switching ·Minimu
Inchange Semiconductor
Inchange Semiconductor
Datenblatt IRFP150N pdf
3 IRFP150N   N-Channel Power MOSFET

IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PS
Fairchild Semiconductor
Fairchild Semiconductor
Datenblatt IRFP150N pdf
2 IRFP150N   Power MOSFET

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev
International Rectifier
International Rectifier
Datenblatt IRFP150N pdf
1 IRFP150NPBF   Power MOSFET

• Lead-Free PD - 95002 IRFP150NPbF www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 www.irf.com IRFP150NPbF www.irf.com 7 IRFP150NP
International Rectifier
International Rectifier
Datenblatt IRFP150NPBF pdf


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