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Datasheet IRF9410 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRF9410 | Power MOSFET(Vdss=30V/ Rds(on)=0.030ohm) PD - 9.1562A
PRELIMINARY
l l l l l l
IRF9410
HEXFET® Power MOSFET
8 7
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
S S S G
1 2
A A D D D D
VDSS = 30V RDS(on) = 0.030Ω
3
6
4
5
T o p V ie w |
International Rectifier |
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1 | IRF9410PBF | Power MOSFET ( Transistor )
PD - 95260
IRF9410PbF
l l l l l l l
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S S S G
1 8
A A D D D D
2
7
VDSS = 30V RDS(on) = 0.030Ω
3
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International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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