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IRF9130 Datenblatt PDF

No Teilenummer Beschreibung Hersteller PDF
5 IRF9130   TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A)

PD - 90549C IRF9130 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID
International Rectifier
International Rectifier
Datenblatt IRF9130 pdf
4 IRF9130   -12A/ -100V/ 0.30 Ohm/ P-Channel Power MOSFET

IRF9130 Data Sheet February 1999 File Number 2220.3 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guar
Intersil Corporation
Intersil Corporation
Datenblatt IRF9130 pdf
3 IRF9130   P-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
Datenblatt IRF9130 pdf
2 IRF9130   P-CHANNEL POWER MOSFET

IRF9130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09
Seme LAB
Seme LAB
Datenblatt IRF9130 pdf
1 IRF9130SMD   P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

IRF9130SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . P–CHANNEL POWE
Seme LAB
Seme LAB
Datenblatt IRF9130SMD pdf


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