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IRF530N PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
12 | IRF530N | Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
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11 | IRF530N | Power MOSFET ( Transistor ) Data Sheet
January 2002
IRF530N
22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Symbol
DRAIN (FLANGE)
IRF530N
D
G S
Features
• Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V
• S |
Fairchild Semiconductor |
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10 | IRF530N | Power MOSFET(Vdss=100V/ Rds(on)=90mohm/ Id=17A) PD - 91351
IRF530N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V RDS(on) = 90mΩ
G S
ID = 17 |
International Rectifier |
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9 | IRF530N | 22A/ 100V/ 0.064 Ohm/ N-Channel Power MOSFET IRF530N
TM
Data Sheet
March 2000
File Number
4843
22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Features
• Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Tem |
Intersil Corporation |
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8 | IRF530N | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF530N
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = |
NXP Semiconductors |
Teilenummer | Beschreibung | Hersteller | |
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STMicroelectronics |
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WINSEMI SEMICONDUCTOR |
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ROHM |
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