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Datasheet IRF510 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | IRF510 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF510
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off- |
 Inchange Semiconductor |
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| 13 | IRF510 | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
 Supertex Inc |
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| 12 | IRF510 | 5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET IRF510
Data Sheet November 1999 File Number 1573.4
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalan |
 Intersil Corporation |
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| 11 | IRF510 | HEFXFET Power MOSFET (Vdss=100V / Id=5.6A) |
 International Rectifier |
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