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Datasheet IRF1104 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRF1104 | Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) PD- 9.1724A
PRELIMINARY
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IRF1104
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 40V
G S
RDS(on) = 0.009Ω ID = 100A
Description
Fifth Generation HEXFETs from |
 International Rectifier |
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| 4 | IRF1104L | (IRF1104L/S) HEXFET Power MOSFET
PD -91845
IRF1104S/L
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 40V RDS(on) = 0.009Ω
G
ID |
International Rectifier |
|
| 3 | IRF1104LPBF | (IRF1104S/LPBF) HEXFET Power MOSFET
PD - 95526
IRF1104S/LPbF
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Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = 40V RDS(on) = |
International Rectifier |
|
| 2 | IRF1104S | (IRF1104L/S) HEXFET Power MOSFET
PD -91845
IRF1104S/L
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 40V RDS(on) = 0.009Ω
G
ID |
International Rectifier |
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