Datasheet HF220-28 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HF220-28	NPN SILICON RF POWER TRANSISTOR HF220-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-28 is Designed for PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: • PG = 12 dB min. at 220 W/30 MHz • IMD3 = -30 dBc max. at 220 W (PEP) • Omnigold™ Metalization System C B E C Ø.125 NOM. B E H D G F E MA	Advanced Semiconductor

HF220 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HF220-28	NPN SILICON RF POWER TRANSISTOR HF220-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-28 is Designed for PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: • PG = 12 dB min. at 220 W/30 MHz • IMD3 = -30 dBc max. at 220 W (PEP) • Omnigold™ Metalization System C B E C Ø.125 NOM.	Advanced Semiconductor
HF220-50F	NPN RF POWER TRANSISTOR HF220-50F NPN RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-50F is a Common Emitter Device Designed for SSB Transmitter Applications in the 2 to 30 MHz Band. FEATURES INCLUDE: • PG = 13 dB min. @ 30 MHz • Gold Metallization • Emitter Ballasting PACKAGE STYLE .500 4L FL	Advanced Semiconductor
HF220-50	NPN SILICON RF POWER TRANSISTOR HF220-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF220-50 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 2	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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