Datasheet HF100-12 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HF100-12	NPN SILICON RF POWER TRANSISTOR HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-12 is Designed for PACKAGE STYLE .500 4L FLG .112x45° A FULL R Ø.125 NOM. L FEATURES: • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System C B E H D G F K MAXIMUM RA	Advanced Semiconductor

HF100 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HF100-12	NPN SILICON RF POWER TRANSISTOR HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-12 is Designed for PACKAGE STYLE .500 4L FLG .112x45° A FULL R Ø.125 NOM. L FEATURES: • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System C B E H	Advanced Semiconductor
HF100-28	NPN SILICON RF POWER TRANSISTOR HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG .112x45° A L FEATUR	Advanced Semiconductor
HF1008	Unshielded Surface Mount Inductors Inductors RF TESTSFRCMRFUDAEMRMCXQRIAIUNRMEXEIEQUMNINSMMTUMCIUSMR(IYNMTOAA((IHMMTM(NmMIUHHNCASMzzGE)))) INDDUACSTOTHALNNEUCRMEABN(EnCRHE*) SERIES HF1008R HF1008 Unshielded Surface Mount Inductors Actual Size Physical Parameters Inches Millimeters A 0.095 to 0.115 2.41 t	Delevan

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Número de pieza	Descripción	Fabricantes	PDF
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