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H55S5122EFR-A3M PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
1 | H55S5122EFR-A3M | 512Mbit (16Mx32bit) Mobile SDR Memory 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x32
This document is a general product description and is subject to change without |
Hynix Semiconductor |
H55S5122EFR-A3 Datasheet - resultados coincidentes |
Teilenummer | Beschreibung | Hersteller | |
H55S5122EFR-A3M | 512Mbit (16Mx32bit) Mobile SDR Memory |
Hynix Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |