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H55S5122EFR-A3M PDF ( Data Sheet )

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1 H55S5122EFR-A3M   512Mbit (16Mx32bit) Mobile SDR Memory

512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without
Hynix Semiconductor
Hynix Semiconductor
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