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GT10Q101 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
1 | GT10Q101 | High Power Switching Applications GT10Q101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q101
High Power Switching Applications
Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation |
Toshiba Semiconductor |
GT10Q10 Datasheet - resultados coincidentes |
Teilenummer | Beschreibung | Hersteller | |
GT10Q101 | High Power Switching Applications |
Toshiba Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
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STMicroelectronics |
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www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |