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GT10J321 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
1 | GT10J321 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT TOSHIBA
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT10J321
GT10J321
High Power Switching Applications Fast Switching Applications
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Teilenummer | Beschreibung | Hersteller | |
GT10J321 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
Toshiba Semiconductor |
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