|
|
Datasheet GJ5706 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GJ5706 | NPN HIGH SPEED SWITCHING TRANSISTOR
ISSUED DATE :2005/05/06 REVISED DATE :
GJ5706
Description Features
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
The GJ5706 is designed high current switching applications. *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable |
GTM |
GJ5 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GJ5706 | NPN HIGH SPEED SWITCHING TRANSISTOR |
GTM |
|
GJ5M | Diode ( Rectifier ) |
American Microsemiconductor |
|
GJ55N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
GTM |
Esta página es del resultado de búsqueda del GJ5706. Si pulsa el resultado de búsqueda de GJ5706 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |