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GE28F640J3 PDF Datasheet

The GE28F640J3 is Intel Strataflash Memory (j3). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 GE28F640J3
Intel StrataFlash Memory (J3)

Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Datasheet Product Features ■ ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads (256Mbit density only) — 32-Byte Write Buffer —6.8 µs per byte effecti

Intel Corporation
Intel Corporation
pdf

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Recommended search results related to GE28F640J3

Part No Description ( Function) Manufacturers PDF
GE28F640K18   (GE28FxxxKx) Intel StrataFlash Memory (J3)

Intel StrataFlash® Synchronous Memory (K3/K18) 28F640K3, 28F640K18, 28F128K3, 28F128K18, 28F256K3, 28F256K18 (x16) Datasheet m o .c U 4 t e e h S a t a .D w w w ■ ■ ■ Product Features Performance — 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities �

Intel Corporation
Intel Corporation
datasheet pdf
GE28F640K3   (GE28FxxxKx) Intel StrataFlash Memory (J3)

Intel StrataFlash® Synchronous Memory (K3/K18) 28F640K3, 28F640K18, 28F128K3, 28F128K18, 28F256K3, 28F256K18 (x16) Datasheet m o .c U 4 t e e h S a t a .D w w w ■ ■ ■ Product Features Performance — 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities �

Intel Corporation
Intel Corporation
datasheet pdf
GE28F640L18   Wireless Flash Memory

Intel StrataFlash® Wireless Memory (L18) 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns

Intel Corporation
Intel Corporation
datasheet pdf
GE28F640L30   Wireless Memory

1.8 Volt Intel StrataFlash® Wireless Memory with 3.0-Volt I/O (L30) 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features ■ High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output

Intel Corporation
Intel Corporation
datasheet pdf
GE28F640W18   Wireless Flash Memory

Intel® Wireless Flash Memory (W18) 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features ■ ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 n

Intel Corporation
Intel Corporation
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
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This is a popular adjustable voltage regulator.
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On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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