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G30 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
22 | G30 | Voltage-Controlled Attenuator Module %& &' ( )*( +, . / 0 1 2 34 5 - . / 0 1 2 34 5 *( ,* 63+%7( ) 8%+,9 : 0 7*;2 34 5 <0' &' 8 2 34 5
" , !$ "= > ?!/ " " $ "! !$ $ !? # $ # ! " ?" > = " ?! $ " #! # @ ! ! ! !$ ! # ! > >! A $ ! = !? : " 0B ! &$ 7 $! # C ? " = ! 7( |
Tyco Electronics |
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21 | G3000TF250 | Anode Shorted Gate Turn-Off Thyristor Date:- 5th March 2013 Data Sheet Issue:- A1
Anode Shorted Gate Turn-Off Thyristor Types G3000TF250
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off |
IXYS |
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20 | G3000TF450 | Anode Shorted Gate Turn-Off Thyristor Date:- 28th April 2013 Data Sheet Issue:- 2
Anode Shorted Gate Turn-Off Thyristor Types G3000TF450
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off |
IXYS |
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19 | G3018 | N-CHANNEL MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/30 REVISED DATE :
G3018
Description Features
N-CHANNEL MOSFET
BVDSS RDS(ON) ID
30V 8 115mA
N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low |
GTM |
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18 | G3018K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/11 REVISED DATE :
G3018K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 8 640mA
The G3018K utilized advanced processing techniques to achieve the lowest pos |
GTM |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
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