| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | FRM9130H | 6A/ -100V/ 0.550 Ohm/ Rad Hard/ P-Channel Power MOSFETs FRM9130D, FRM9130R, FRM9130H June 1998 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-204AA Features • 6A, -100V, RDS(on) = 0.550Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000K |
 Intersil |
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Recommended search results related to FRM9130H |
| Part No | Description ( Function) | Manufacturers | |
| FRM9130 | P-Channel MOSFET Transistor INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product Specification FRM9130 DESCRIPTION ·-6A, -100V, RDS(on) = 0.55Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal chara |
 Inchange Semiconductor |
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| FRM9130D | 6A/ -100V/ 0.550 Ohm/ Rad Hard/ P-Channel Power MOSFETs FRM9130D, FRM9130R, FRM9130H June 1998 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-204AA Features • 6A, -100V, RDS(on) = 0.550Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(S |
Intersil |
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| FRM9130R | 6A/ -100V/ 0.550 Ohm/ Rad Hard/ P-Channel Power MOSFETs FRM9130D, FRM9130R, FRM9130H June 1998 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-204AA Features • 6A, -100V, RDS(on) = 0.550Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(S |
Intersil |
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| AGR09130E | Lateral MOSFET t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system |
 TriQuint Semiconductor |
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| AM27PS19130B3A | 16/384-BIT (2048 x 8) BIPOLAR PROM |
 Advanced Micro Devices |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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