Datasheet FQP1P50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQP1P50	500V P-Channel MOSFET FQP1P50 June 2000 QFET FQP1P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistan	Fairchild Semiconductor

FQP1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQP19N20C	200V N-Channel MOSFET FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET FQP19N20C / FQPF19N20C N-Channel QFET® MOSFET 200 V, 19 A, 170 mΩ November 2013 Features • 19 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A • Low Gate Charge (Typ. 40.5 nC) • Low Crss (Typ. 85 pF) • 10	Fairchild Semiconductor
FQP12N60C	FQP12N60C/FQPF12N60C FQP12N60C/FQPF12N60C QFET FQP12N60C/FQPF12N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tai	Fairchild Semiconductor
FQP10N20C	200V N-Channel MOSFET FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tai	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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