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Datasheet FQD3N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | FQD3N60 | 600V N-Channel MOSFET FQD3N60 / FQU3N60
April 2000
QFET
FQD3N60 / FQU3N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim |
Fairchild Semiconductor |
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1 | FQD3N60C | 600V N-Channel MOSFET FQD3N60C
FQD3N60C
600V N-Channel MOSFET
Features
• 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
January 2006
QFET TM
Description
These N-Channel enhancement |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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